PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE FILMS GROWN BY LOW-PRESSURE MOVPE

被引：16

作者：

YOSHIKAWA, A

MUTO, S

YAMAGA, S

KASAI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：992 / 996

页数：5

共 17 条

[1] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
BICKNELL, RN
GILES, NC
SCHETZINA, JF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1735 - 1737
[2] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS
DEAN, PJ
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646
[3] LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE
FUJITA, S
YODO, T
SASAKI, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 27 - 30
[4] HAYAMIZU S, 1987, 19TH C SOL STAT DEV, P255
[5] KAMATA A, 1986, 18TH C SOL STAT DEV, P651
[6] KAWAKYU Y, 1987, 19TH C SOL STAT DEV, P259
[7] GROWTH-KINETICS IN THE MOVPE OF ZNSE ON GAAS USING ZINC AND SELENIUM ALKYLS
MITSUHASHI, H
MITSUISHI, I
KUKIMOTO, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 219 - 222
[8] RECENT DEVELOPMENTS IN THE MOVPE OF II-VI-COMPOUNDS
MULLIN, JB
IRVINE, SJC
GIESS, J
ROYLE, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 1 - 12
[9] OKAJIMA M, 1986, 18TH C SOL STAT DEV, P647
[10] HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION
SHIBATA, N
OHKI, A
ZEMBUTSU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08): : 1305 - 1309