GROWTH OF N-ZNSE AND P-ZNSE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING METAL ZN AND H2SE

Undoped, n- and p-ZnSe films were successfully grown on GaAs substrates by gas source molecular beam epitaxy using metal Zn and H2Se as sources. Ga and N were used as n- and p-type dopant, respectively. With increasing temperature of the Ga cell, the electron concentration increased from 2.0X10(16) to 1.2X10(18) cm-3 and the electron mobility decreased from 418 to 235 cm2/V. s. These values of the electron mobility indicate that high quality n-type ZnSe films were grown. N doping was performed using active-nitrogen generated by radio-frequency plasma. The net acceptor concentration of the ZnSe film was 4.6X10(17) CM-3. The resistivity of the N-doped ZnSe films strongly depended on the growth conditions. At a growth temperature of 250-degrees-C, a ZnSe film whose resistivity was as low as 6.9 OMEGA cm was obtained.