Thermal analysis of chemical reaction forming the CuGaSe2 single phase

被引:5
作者
Matsushita, H
Jitsukawa, H
Takizawa, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 07期
关键词
CuGaSe2 single phase; chemical reaction; intermediate product; differential thermal analysis; X-ray diffraction;
D O I
10.1143/JJAP.35.3830
中图分类号
O59 [应用物理学];
学科分类号
摘要
The chemical reaction which forms the CuGaSe2 phase has been investigated by differential thermal analysis and powder X-ray diffraction. The two mixtures of CuGa+2Se and Cu+Ga+2Se are used as starting materials. In the former mixture, the CuGaSe2 phase has been formed incompletely below the melting point of CuGaSe2. In the latter mixture, the CuGaSe2 phase has been formed by the exothermic reaction between CuSe2 and Ga phases at about 900 degrees C, after the formation of the CuSe2 phase below 380 degrees C. In contrast to the case of CuInSe2, the selenization of CuGa alloy is not necessarily required for growing the CuGaSe2 single phase. The chemical reaction between Cu selenides and Ga at temperatures higher than 900 degrees C works to remove heterogeneous products and form a CuGaSe2 single phase.
引用
收藏
页码:3830 / 3835
页数:6
相关论文
共 15 条
[1]   THE PHASE-RELATIONS IN THE SYSTEM CU,IN,SE [J].
BACHMANN, KJ ;
GOSLOWSKY, H ;
FIECHTER, S .
JOURNAL OF CRYSTAL GROWTH, 1988, 89 (2-3) :160-164
[2]   HIGH-EFFICIENCY CUINXGA1-XSE2 SOLAR-CELLS MADE FROM (INX,GA1-X)2SE3 PRECURSOR FILMS [J].
GABOR, AM ;
TUTTLE, JR ;
ALBIN, DS ;
CONTRERAS, MA ;
NOUFI, R ;
HERMANN, AM .
APPLIED PHYSICS LETTERS, 1994, 65 (02) :198-200
[3]  
Hansen M., 1958, CONSTITUTION BINARY, DOI DOI 10.1149/1.2428700
[4]   CRYSTAL-GROWTH OF CUINSE2 BY THE METHOD OF HORIZONTAL BRIDGMAN WITH 2 TEMPERATURE ZONES [J].
MATSUSHITA, H ;
ENDO, S ;
IRIE, T ;
NAKANISHI, H .
JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :655-658
[5]   Single crystal growth of CuInSe2 by selenization horizontal Bridgman method [J].
Matsushita, H ;
Takizawa, T .
JOURNAL OF CRYSTAL GROWTH, 1996, 160 (1-2) :71-77
[6]   THERMODYNAMICAL PROPERTIES OF I-III-VI2-GROUP CHALCOPYRITE SEMICONDUCTORS [J].
MATSUSHITA, H ;
ENDO, S ;
IRIE, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (06) :1181-1185
[7]   THERMAL-ANALYSIS OF CHEMICAL-REACTION PROCESS FORMING CUINSE2 CRYSTAL [J].
MATSUSHITA, H ;
TAKIZAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A) :4699-4705
[8]  
MATSUSHITA H, 1995, JPN J APPL PHYS, V34, P3774
[9]   DETERMINATION OF PHASE-TRANSITION ENTHALPIES OF AIBIIIC2VI-TYPE COMPOUNDS [J].
MECHKOVSKI, LA ;
ALFER, SA ;
BODNAR, IV ;
BOLOGA, AP .
THERMOCHIMICA ACTA, 1985, 93 (SEP) :729-732
[10]   SEEDED GROWTH OF CUGASE2 SINGLE-CRYSTALS USING THE TRAVELING HEATER METHOD [J].
MIYAKE, H ;
TAJIMA, M ;
SUGIYAMA, K .
JOURNAL OF CRYSTAL GROWTH, 1992, 125 (1-2) :381-383