Single crystal growth of CuInSe2 by selenization horizontal Bridgman method

Bulk single crystals of CuInSe2 are grown by the selenization horizontal Bridgman method where the temperature profile is moved electrically with controlling Se vapor pressure. The p-type single crystals with large Hall coefficients and mobilities are prepared at Se vapor pressures of 10 and 25 Torr. Overshoots are observed in the Hall coefficient versus temperature curves for most of the p-type crystals. The peak temperature at the overshoot depends on the donor density, which is controlled by Se vapor pressure ranging from 5 to 25 Torr. Accepters of the p-type crystals have two kinds of activation energies of similar to 20 meV for Cu vacancy or copper in the In site, and similar to 60 meV for the In vacancy. The number ratio of those densities is determined by the variation of the Hall coefficient versus temperature curves.