COMPENSATED ELECTRICAL-PROPERTIES OF CUINSE2 SINGLE-CRYSTALS

被引：13

作者：

NOMURA, S

ITOH, J

TAKIZAWA, T

机构：

[1] Department of Physics, College of Humanities and Sciences, Nihon University, Setagaya-ku, Tokyo, 156

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

CUINSE(2); STOICHIOMETRY CONTROL; DEFECT CHEMISTRY; HALL EFFECT; HALL OVERSHOOT; COMPENSATION;

D O I：

10.7567/JJAPS.32S3.97

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties of stoichiometry-controlled single crystals of CuInSe2 are investigated by the Hall effect measurement over the temperature range of 20 to 300 K. Overshoot characteristics have been observed in the temperature dependence of the Hall coefficient for all p-type crystals. The compensating donor density is shown to be a dominant factor for the Hall overshoot rather than the acceptor density. If we assume a relation that mu(n)/mu(p) = Const. T(-eta) with eta around 1.5, the Hall overshoot is well explained.

引用

页码：97 / 98

页数：2

共 7 条

[1] INTRINSIC DEFECT STATES IN CUINSE2 SINGLE-CRYSTALS [J].