Sensors based on pulsed laser deposition of multilayers of metal oxides

被引:18
作者
Marotta, V [1 ]
Orlando, S [1 ]
Parisi, GP [1 ]
Giardini, A [1 ]
机构
[1] Ist Mat Speciali, CNR, I-85050 Tito Scalo, PZ, Italy
关键词
laser ablation; metallic oxide; gas sensor; thin film;
D O I
10.1016/S0169-4332(99)00402-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Pulsed laser ablation has been utilized in our laboratory to deposit thin films of semiconducting oxides such as indium oxide and tin oxide. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser (lambda = 532 nm) on silicon (100) substrates. A comparison has been performed, among indium oxide, tin oxide, and multilayers of indium and tin oxides, to evaluate their use as NO gas sensors. The influence of physical parameters, such as substrate temperature and laser fluence, on the velocity response of the films and on their resistance variation, has been investigated. The deposited films have been characterized by X-ray diffraction (XRD) and electric resistance measurements. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:640 / 646
页数:7
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