Electrochemical hydrogen doping of zinc oxide: A study of the oxide-proton conductor interface

被引:7
作者
Chianella, C. [1 ]
Palombari, R. [1 ]
Petricca, A. [1 ]
机构
[1] Univ Perugia, Dipartimento Chim, I-06123 Perugia, Italy
关键词
ZnO semiconductor; ZnO hydrogen doping; electrochemical hydrogen insertion; ZnO electrode; proton conductor;
D O I
10.1016/j.electacta.2006.05.015
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The aim of the work is to show that hydrogen can be cathodically inserted into zinc oxide. This process corresponds to an actual doping of the material. The doped material shows a high potential stability, with moderate reversibility, when measured against a platinum-hydrogen electrode, and using a proton conductor as electrolyte. Evidence of hydrogen chemisorption onto zinc oxide surface is also given. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:369 / 372
页数:4
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