Influence of some donor-acceptor couples on surface conductivity of aluminum doped zinc oxide

被引:4
作者
Mezzanotte, M [1 ]
Palombari, R [1 ]
机构
[1] Univ Perugia, Dipartimento Chim, I-06123 Perugia, Italy
关键词
Al-doped ZnO; semiconductor; conductance sensor; O-2; NO2;
D O I
10.1016/j.snb.2004.10.035
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Zinc oxide is a wide-band semiconductor, which exhibits n-type conductivity that can be stabilised by using dopants pertaining to the third group b like Al3+. The conductivity of thick layers of doped material was tested in the presence of donor-acceptor couples, namely oxygen, water, CO and NO2 and their influence was related to the charge transfer reactions, which take place on the material surface. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:433 / 437
页数:5
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