Study of Ta-Si-N thin films for use as barrier layer in copper metallizations

被引:47
作者
Fischer, D [1 ]
Scherg, T
Bauer, JG
Schulze, HJ
Wenzel, C
机构
[1] Dresden Univ Technol, Semicond & Microsyst Technol Lab, D-8027 Dresden, Germany
[2] Siemens AG, Corp Technol, D-8000 Munich, Germany
关键词
diffusion barrier; Ta-Si; Ta-Si-N; nanocrystalline materials; amorphous materials; Cu metallization;
D O I
10.1016/S0167-9317(99)00315-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work focuses on the deposition process, microanalytical characterization and barrier behaviour of 10-100-nm thick sputtered Ta-Si and Ta-Si-N films. Pure Ta-Si films were found to be already nanocrystalline. The addition of N-2 leads to a further grain fining resulting in amorphous films with excellent thermal stability. According to microanalytical investigations, Ta-Si barriers between Cu and Si with a thickness of only 10 nm are not stable at 600 degrees C. Copper silicides are formed due to intensive Cu diffusion throughout the barrier. In contrast, 10-nm thick nitrogen-rich Ta-Si-N barriers remain thermally stable during annealing at 600 degrees C and protect the Si wafer from Cu indiffusion. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:459 / 464
页数:6
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