diffusion barrier;
Ta-Si;
Ta-Si-N;
nanocrystalline materials;
amorphous materials;
Cu metallization;
D O I:
10.1016/S0167-9317(99)00315-9
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This work focuses on the deposition process, microanalytical characterization and barrier behaviour of 10-100-nm thick sputtered Ta-Si and Ta-Si-N films. Pure Ta-Si films were found to be already nanocrystalline. The addition of N-2 leads to a further grain fining resulting in amorphous films with excellent thermal stability. According to microanalytical investigations, Ta-Si barriers between Cu and Si with a thickness of only 10 nm are not stable at 600 degrees C. Copper silicides are formed due to intensive Cu diffusion throughout the barrier. In contrast, 10-nm thick nitrogen-rich Ta-Si-N barriers remain thermally stable during annealing at 600 degrees C and protect the Si wafer from Cu indiffusion. (C) 2000 Elsevier Science B.V. All rights reserved.
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, YJ
;
Suh, BS
论文数: 0引用数: 0
h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Suh, BS
;
Kwon, MS
论文数: 0引用数: 0
h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kwon, MS
;
Park, CO
论文数: 0引用数: 0
h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, YJ
;
Suh, BS
论文数: 0引用数: 0
h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Suh, BS
;
Kwon, MS
论文数: 0引用数: 0
h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kwon, MS
;
Park, CO
论文数: 0引用数: 0
h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea