Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy

被引：29

作者：

Garcia-Belmonte, Germa ^{[1
]}

Garcia-Canadas, Jorge

Mora-Sero, Ivan

Bisquert, Juan

Voz, Cristobal

Puigdollers, Joaquim

Alcubilla, Ramon

机构：

[1] Univ Jaume 1, Dept Ciencias Expt, E-12071 Castellon de La Plana, Spain

[2] Univ Politecn Cataluna, Dept Elect Engn, E-08034 Barcelona, Spain

来源：

THIN SOLID FILMS | 2006年 / 514卷 / 1-2期

关键词：

solar cell; impedance spectroscopy; buffer layer; chemical vapor deposition; carrier lifetime;

D O I：

10.1016/j.tsf.2006.02.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By combining information on solar cell layer structure and electrical response analyzed by impedance spectroscopy, relevant knowledge is obtained about photogenerated carriers recombination and extraction. The inclusion of a-Si:H buffer layers on the response of bifacial heterojunction silicon solar cells prepared by hot-wire chemical vapor deposition is studied. Impedance analysis indicates that the effect of the buffer layer is twofold: (a) effective minority carrier lifetime is improved by one order of magnitude, confirmed by alternative quasi-steady-state photoconductance, and (b) whole series resistance is increased. Both effects seem to compensate each other so as to get similar efficiency and fill factor. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：254 / 257

页数：4

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