1.3-μm GaInNAs-AlGaAs distributed feedback lasers

被引：41

作者：

Reinhardt, M ^{[1
]}

Fischer, M ^{[1
]}

Kamp, M ^{[1
]}

Hofmann, J ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 03期

关键词：

distributed feedback (DFB) lasers; gain coupling; GaInNAs; optical fiber communications; semiconductor lasers;

D O I：

10.1109/68.826900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature continuous-wave operation of 1.3-mu m single-mode GaInNAs-AlGaAs distributed feedback (DFB)-lasers has been realized, The laser structure has been grown by solid source molecular beam epitaxy (MBE) using an electron cyclotron resonance plasma source for nitrogen activation (ECR-MBE). Laterally to the laser ridge a metal grating is patterned in order to obtain DFB, The evanescent field of the laser mode couples to the grating resulting in single-mode DFB emission. The continuous wave threshold currents are around 120 mA for a cavity with 800-mu m length and 2 mu m width, Monomode emission with side-mode suppression ratios of nearly 40 dB have been obtained.

引用

页码：239 / 241

页数：3

共 9 条

[1]

Eisert D, 1996, APPL PHYS LETT, V68, P599, DOI 10.1063/1.116480

[2] Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers [J].