Simultaneous and independent semiconductor laser operation at 1.3 and 1.55 mu m produced by focused ion beam etching

被引：1

作者：

Gardiner, CK ^{[1
]}

Kozlowski, DA ^{[1
]}

England, JMC ^{[1
]}

Plumb, RGS ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECT RES CTR,CAMBRIDGE CB3 0HE,ENGLAND

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 20期

关键词：

etching; ion beam effects; laser modes; semiconductor junction lasers;

D O I：

10.1049/el:19961593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors show that, by introducing a single focused ion beam etched cavity into the 1.3 mu m bandgap material between the phase tuning and sampled grating sections of a three section DBR laser, sufficient feedback is produced to enable stimulated emission at 1.3, as well as 1.55 mu m. The etched cavity also increases the intercontact resistance.

引用

页码：1891 / 1892

页数：2

共 3 条

[1] Three-section sampled-grating DBR lasers: Modelling and measurements [J].

Gardiner, CK ;

Plumb, RGS ;

Williams, PJ ;

Reid, TJ .

IEE PROCEEDINGS-OPTOELECTRONICS, 1996, 143 (01) :24-30

[2] SINGLEMODE 1.3-MU-M FABRY-PEROT LASERS BY MODE SUPPRESSION [J].

KOZLOWSKI, DA ;

YOUNG, JS ;

ENGLAND, JMC ;

PLUMB, RGS .

ELECTRONICS LETTERS, 1995, 31 (08) :648-650

[3] SPECTRAL PERTURBATION AND MODE SUPPRESSION IN 1.3-MU-M FABRY-PEROT LASERS [J].

YOUNG, JS ;

KOZLOWSKI, DA ;

ENGLAND, JMC ;

PLUMB, RGS .

ELECTRONICS LETTERS, 1995, 31 (04) :290-291

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