SINGLEMODE 1.3-MU-M FABRY-PEROT LASERS BY MODE SUPPRESSION

被引：20

作者：

KOZLOWSKI, DA ^{[1
]}

YOUNG, JS ^{[1
]}

ENGLAND, JMC ^{[1
]}

PLUMB, RGS ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,MICROELECTR RES CTR,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 08期

关键词：

SEMICONDUCTOR JUNCTION LASERS; LASER MODES; CRYSTAL DEFECTS; ION BEAM EFFECTS;

D O I：

10.1049/el:19950413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Focused Ga+ ion beam etched pits are used to simulate defects, reflective and nonradiative, in conventional 1.3 mu m Fabry-Perot lasers. Combination of three defect sites positioned along the lasing filament results in a quasi-singlemode laser with 30dB mode suppression and negligible rises in threshold current. The authors also report the appearance of a single enhanced spectral line below threshold.

引用

页码：648 / 650

页数：3

共 6 条

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[6] SPECTRAL PERTURBATION AND MODE SUPPRESSION IN 1.3-MU-M FABRY-PEROT LASERS [J].

YOUNG, JS ;

KOZLOWSKI, DA ;

ENGLAND, JMC ;

PLUMB, RGS .

ELECTRONICS LETTERS, 1995, 31 (04) :290-291

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