STRAIN AND SCATTERING RELATED SPECTRAL OUTPUT OF 1.3-MU-M INGAASP SEMICONDUCTOR DIODE-LASERS

被引：14

作者：

PETERS, FH

CASSIDY, DT

机构：

[1] McMaster University, Department of Engineering Physics, Hamilton, ON

来源：

APPLIED OPTICS | 1991年 / 30卷 / 09期

关键词：

D O I：

10.1364/AO.30.001036

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A correlation between the spectral output of 1.3-mu-m InGaAsP semiconductor diode lasers and the distribution along the length and width of the active region of strain and scattering centers is reported. The strain and scattering center distributions in the active region were obtained by measuring and analyzing the spatially resolved and polarization resolved electroluminescence along the active region of the lasers. Measurements were made on gain-guided, planar buried heterostructure, and arrowhead buried crescent lasers. The results suggest that the material properties of the laser structure affect the longitudinal mode spectrum.

引用

页码：1036 / 1041

页数：6

共 21 条

[1] EFFECTS OF STRESS ON THRESHOLD, WAVELENGTH, AND POLARIZATION OF THE OUTPUT OF INGAASP SEMICONDUCTOR DIODE-LASERS [J].