POLARIZATION OF THE OUTPUT OF INGAASP SEMICONDUCTOR DIODE-LASERS

[1] EFFECTS OF STRESS ON THRESHOLD, WAVELENGTH, AND POLARIZATION OF THE OUTPUT OF INGAASP SEMICONDUCTOR DIODE-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) : 6631 - 6638

[2] ADAMS CS, 1988, 1988 C LAS EL, V7

[3] AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH5

[4] ANALYTIC DESCRIPTION OF A HOMOGENEOUSLY BROADENED INJECTION-LASER [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) : 913 - 918

[5] TEMPERATURE-DEPENDENT POLARIZATION BEHAVIOR OF SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 731 - 733

[6] REDUCTION OF THE THRESHOLD CURRENT OF InGaAsP/InP HETEROLASERS BY UNIDIRECTIONAL COMPRESSION. [J]. Soviet journal of quantum electronics, 1984, 14 (08): : 1120 - 1121

[7] Eliseev P. G., 1986, Soviet Journal of Quantum Electronics, V16, P1046, DOI 10.1070/QE1986v016n08ABEH007236

[8] Eliseev P. G., 1986, Soviet Journal of Quantum Electronics, V16, P1051, DOI 10.1070/QE1986v016n08ABEH007237

[9] MODE SELECTION IN GAAS INJECTION LASERS RESULTING FROM FRESNEL REFLECTION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (07) : 772 - 776

[10] EFFECTS OF UNIAXIAL STRESS ON DOUBLE HETEROSTRUCTURE LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (09) : 1388 - 1392

[1] EFFECTS OF STRESS ON THRESHOLD, WAVELENGTH, AND POLARIZATION OF THE OUTPUT OF INGAASP SEMICONDUCTOR DIODE-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) : 6631 - 6638

[2] ADAMS CS, 1988, 1988 C LAS EL, V7

[3] AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH5

[4] ANALYTIC DESCRIPTION OF A HOMOGENEOUSLY BROADENED INJECTION-LASER [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) : 913 - 918

[5] TEMPERATURE-DEPENDENT POLARIZATION BEHAVIOR OF SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 731 - 733

[6] REDUCTION OF THE THRESHOLD CURRENT OF InGaAsP/InP HETEROLASERS BY UNIDIRECTIONAL COMPRESSION. [J]. Soviet journal of quantum electronics, 1984, 14 (08): : 1120 - 1121

[7] Eliseev P. G., 1986, Soviet Journal of Quantum Electronics, V16, P1046, DOI 10.1070/QE1986v016n08ABEH007236

[8] Eliseev P. G., 1986, Soviet Journal of Quantum Electronics, V16, P1051, DOI 10.1070/QE1986v016n08ABEH007237

[9] MODE SELECTION IN GAAS INJECTION LASERS RESULTING FROM FRESNEL REFLECTION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (07) : 772 - 776

[10] EFFECTS OF UNIAXIAL STRESS ON DOUBLE HETEROSTRUCTURE LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (09) : 1388 - 1392