Structural and photoelectrochemical properties of CdSe thin films deposited by the vacuum evaporation technique

被引：10

作者：

Murali, KR ^{[1
]}

Srinivasan, K

Trivedi, DC

机构：

[1] Cent Electrochem Res Inst, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India

[2] Thanthai Periyar Inst Technol, Dept Phys, Vellore, Tamil Nadu, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 111卷 / 01期

关键词：

CdSe; thin films; vacuum evaporation; photoelectrochemistry;

D O I：

10.1016/S0921-5107(03)00157-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and photoelectrochemical (PEC) properties of vacuum evaporated CdSe films using the laboratory synthesized powder as source material was studied. The substrate temperature was varied in the range 300-473 K. X-ray diffraction studies indicated preferential orientation in the (002) direction. SEM studies indicated increase of grain size from 1.0 to 3.0 mum with increase of substrate temperature. The power conversion efficiency was found to be 7.0% under an illumination of 60 mW cm(-2) after photoetching. A peak quantum efficiency of 0.6 was obtained for an incident wavelength of 720 nm. Semiconducting parameters were estimated. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

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