BRUSH PLATED CDSE FILMS AND THEIR PHOTOELECTROCHEMICAL CHARACTERISTICS

被引：29

作者：

MURALI, KR ^{[1
]}

SUBRAMANIAN, V ^{[1
]}

RANGARAJAN, N ^{[1
]}

LAKSHMANAN, AS ^{[1
]}

RANGARAJAN, SK ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT INORGAN & PHYS CHEM,BANGALORE 560012,KARNATAKA,INDIA

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1994年 / 368卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(93)03090-C

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The brush plating technique has been employed for the first time to obtain CdSe films on Ti and conducting glass substrates. These films have been annealed in an argon atmosphere and their structural, optical and photoelectrochemical properties are discussed. The power conversion efficiency has been found to be 7.43% under an illumination of 80 mW cm-2. A peak quantum efficiency of 0.64 is obtained for an incident wavelength of 720 nm. Donor concentration of 3.42 x 10(17) cm-3, electron mobility of 3 cm2 V-1 s-1 and minority carrier diffusion length of 0.013 mum have been obtained.

引用

页码：95 / 100

页数：6

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