Model for spin-polarized transport in perovskite manganite bicrystal grain boundaries

被引:27
作者
Gunnarsson, R [1 ]
Kadigrobov, A
Ivanov, Z
机构
[1] Chalmers Univ Technol, Dept Microstruct & Nanosci, S-41296 Gothenburg, Sweden
[2] Gothenburg Univ, S-41296 Gothenburg, Sweden
[3] Natl Acad Sci Ukraine, BL Verkin Inst Low Temp Phys & Engn, UA-310164 Kharkov, Ukraine
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 02期
关键词
D O I
10.1103/PhysRevB.66.024404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics of a low-angle bicrystal grain boundary junction in perovskite manganite La2/3Sr1/3MnO3 thin film. By gradually trimming the junction we have been able to reveal the nonlinear behavior of the latter. With the use of the relation M(GB)proportional toM(bulk)MR(*) we have extracted the grain-boundary magnetization. Further, we demonstrate that the built-in potential barrier of the grain boundary can be modeled by V(bi)proportional toM(bulk)(2)-M-GB(2). Thus our model connects the magnetoresistance with the potential barrier at the grain-boundary region. The results indicate that the band-bending at the grain-boundary interface has a magnetic origin.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 29 条
[1]   Defect-induced spin disorder and magnetoresistance in single-crystal and polycrystal rare-earth manganite thin films [J].
Evetts, JE ;
Blamire, MG ;
Mathur, ND ;
Isaac, SP ;
Teo, BS ;
Cohen, LF ;
Macmanus-Driscoll, JL .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1998, 356 (1742) :1593-1613
[3]   Critical phenomena in the double-exchange ferromagnet La0.7Sr0.3MnO3 [J].
Ghosh, K ;
Lobb, CJ ;
Greene, RL ;
Karabashev, SG ;
Shulyatev, DA ;
Arsenov, AA ;
Mukovskii, Y .
PHYSICAL REVIEW LETTERS, 1998, 81 (21) :4740-4743
[4]  
GLAZMAN LI, 1988, ZH EKSP TEOR FIZ, V67, P1276
[5]   Physics of grain boundaries in the colossal magnetoresistance manganites [J].
Gross, R ;
Alff, L ;
Büchner, B ;
Freitag, BH ;
Höfener, C ;
Klein, J ;
Lu, YF ;
Mader, W ;
Philipp, JB ;
Rao, MSR ;
Reutler, P ;
Ritter, S ;
Thienhaus, S ;
Uhlenbruck, S ;
Wiedenhorst, B .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 211 (1-3) :150-159
[6]  
GUNNARSSON R, 2001, MRS S P, V674
[7]   Grain-boundary effects on the magnetoresistance properties of perovskite manganite films [J].
Gupta, A ;
Gong, GQ ;
Xiao, G ;
Duncombe, PR ;
Lecoeur, P ;
Trouilloud, P ;
Wang, YY ;
Dravid, VP ;
Sun, JZ .
PHYSICAL REVIEW B, 1996, 54 (22) :15629-15632
[8]  
Gupta A, 1998, COLOSSAL MAGNETORESISTANCE, CHARGE ORDERING AND RELATED PROPERTIES OF MANGANESE OXIDES, P189
[9]   TUNNELING OF SPIN-POLARIZED ELECTRONS AND MAGNETORESISTANCE IN GRANULAR NI FILMS [J].
HELMAN, JS ;
ABELES, B .
PHYSICAL REVIEW LETTERS, 1976, 37 (21) :1429-1432
[10]   Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites [J].
Höfener, C ;
Philipp, JB ;
Klein, J ;
Alff, L ;
Marx, A ;
Büchner, B ;
Gross, R .
EUROPHYSICS LETTERS, 2000, 50 (05) :681-687