Nanostructure fabrication on silicon surfaces by atom transfer from a gold tip using an ultrahigh vacuum scanning tunneling microscope

被引:14
作者
Fujita, D
Jiang, QD
Dong, ZC
Sheng, HY
Nejoh, H
机构
[1] Natl. Research Institute for Metals, Tsukuba 305
关键词
D O I
10.1088/0957-4484/8/3A/003
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel ultrahigh vacuum system for the fabrication and measurement of nanostructures has been developed, which consists of a preparation chamber, a precise mask deposition facility, a scanning tunneling microscope (STM) for nanofabrication, and a low temperature four-contact-probe apparatus. Using the field-induced atom transfer from a gold STM tip, it: has been demonstrated that nanometer-scale gold structures can be fabricated not only on an atomically clean Si(lll)-(7 x 7) surface but also in a gap region among four macroscopic electrodes on a sputter-cleaned Si(lll)surface. The overall findings clearly suggest that the STM atom-transfer technique has proved itself to be a very promising candidate for fabricating nanometer-scale single electron devices.
引用
收藏
页码:A10 / A14
页数:5
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