Effect of voltage drop within the synaptic cleft on the current and voltage generated at a single synapse

被引:16
作者
Savtchenko, LP
Antropov, SN
Korogod, SM
机构
[1] CNRS, UPR 9041, Unite Neurocybernet Cellulaire, F-13009 Marseille, France
[2] Dniepropetrovsk State Univ, UA-320625 Dniepropetrovsk, Ukraine
关键词
D O I
10.1016/S0006-3495(00)76670-7
中图分类号
Q6 [生物物理学];
学科分类号
071011 ;
摘要
In a model of a single synapse with a circular contact rone-and a single concentric zone containing receptor-gated channels, we studied the dependence of the synaptic current on the synaptic cleft width and on the relative size of the receptor zone, During synaptic excitation, the extracellular current entered the cleft and flowed into the postsynaptic cell through receptor channels distributed homogeneously over the receptor zone. The membrane potential and channel currents were smaller toward the deft center if compared to the cleft edges. This radial gradient was due to the voltage drop produced by the synaptic current on the cleft resistance. The total synaptic current:conducted by the same number of open channels was sensitive to changes in the receptor zone radius and the cleft width. We conclude that synaptic geometry may affect synaptic currents by defining the volume resistor of the cleft.:The in-series connection of the resistances of the intracleft medium and the receptor channels plays the role of the synaptic voltage divider. This voltage dividing effect should be taken into account when the conductance of single channels or synaptic contacts is estimated from experimental measurements of voltage-current relationships.
引用
收藏
页码:1119 / 1125
页数:7
相关论文
共 32 条
[31]   A mathematical description of miniature postsynaptic current generation at central nervous system synapses [J].
Uteshev, VV ;
Pennefather, PS .
BIOPHYSICAL JOURNAL, 1996, 71 (03) :1256-1266
[32]   Mechanisms of electrical coupling between pyramidal cells [J].
Vigmond, EJ ;
Velazquez, JLP ;
Valiante, TA ;
Bardakjian, BL ;
Carlen, PL .
JOURNAL OF NEUROPHYSIOLOGY, 1997, 78 (06) :3107-3116