Application of X-ray diffraction in Laue geometry to imperfect near-surface layers

被引:5
作者
Kyutt, RN
Argunova, TS
机构
[1] Loffe Physico-Technical Institute, Russian Academy of Sciences Polytekhnicheskaya. Id. 26
来源
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1997年 / 19卷 / 2-4期
关键词
D O I
10.1007/BF03040982
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The paper presents the X-ray diffractometry analysis of thin-layer structures made by exploiting the combination of two diffraction geometries-the Bragg one and the Laue one. For this purpose a three-crystal setting was applied. Since the structural parameters of thin layers vary primarily along the surface normal, directing the diffraction vector along this normal, one can succeed in the assessment of the quality in whole, but not in the extraction of different components of lattice damage. The paper shows that, in order to evaluate the contributions, the application of the Laue geometry is promising; it substantially facilitates the study of relaxation, the determination of compositionally dependent properties and the evaluation of macro- as well as micro-strain components. The objects under study were GaAs/Si and SiGe/Si heterostructures as well as (CaF2 + CdF2)/Si superlattices.
引用
收藏
页码:267 / 275
页数:9
相关论文
共 13 条
[1]  
Argunova T. S., 1991, Diffusion and Defect Data - Solid State Data, Part B (Solid State Phenomena), V19-20, P581
[2]   DETERMINATION OF YBACUO THIN-LAYER STRUCTURAL PARAMETERS BY USING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY [J].
ARGUNOVA, TS ;
KYUTT, RN ;
SCHEGLOV, MP ;
FALEEV, NN .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) :A212-A215
[3]  
ARGUNOVA TS, 1991, I PHYS C SER, V117, P669
[4]   HIGH-RESOLUTION DIFFRACTION-SPACE MAPPING AND TOPOGRAPHY [J].
FEWSTER, PF .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (03) :121-127
[5]   DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS AT SEMICONDUCTOR HETEROINTERFACES [J].
GOORSKY, MS ;
MESHKINPOUR, M ;
STREIT, DC ;
BLOCK, TR .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) :A92-A96
[6]   INTERPRETATION OF THE DIFFRACTION PROFILE RESULTING FROM STRAIN RELAXATION IN EPILAYERS [J].
KIDD, P ;
FEWSTER, PF ;
ANDREW, NL .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) :A133-A138
[7]   X-RAY-DIFFRACTION INVESTIGATION OF SINGLE STEP AND STEP-GRADED SIGE ALLOY BUFFERS FOR THE GROWTH OF SHORT-PERIOD SI(M)GE(N) SUPERLATTICES USING RECIPROCAL SPACE MAPPING [J].
KOPPENSTEINER, E ;
HAMBERGER, P ;
BAUER, G ;
PESEK, A ;
KIBBEL, H ;
PRESTING, H ;
KASPER, E .
APPLIED PHYSICS LETTERS, 1993, 62 (15) :1783-1785
[8]   DETERMINATION OF THREADING DISLOCATION DENSITY IN HETEROEPITAXIAL LAYERS BY DIFFUSE-X-RAY SCATTERING [J].
KOPPENSTEINER, E ;
SCHUH, A ;
BAUER, G ;
HOLY, V ;
WATSON, GP ;
FITZGERALD, EA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) :A114-A119
[9]  
Kyutt R. N., 1994, Physics of the Solid State, V36, P1473
[10]  
Kyutt R. N., 1989, Soviet Physics - Solid State, V31, P1432