Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells

被引：74

作者：

Chow, WW ^{[1
]}

Jones, ED ^{[1
]}

Modine, NA ^{[1
]}

Allerman, AA ^{[1
]}

Kurtz, SR ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 19期

关键词：

D O I：

10.1063/1.125181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GaInNAs/GaAs laser structures. (C) 1999 American Institute of Physics. [S0003-6951(99)05245-6].

引用

页码：2891 / 2893

页数：3

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