On the theory of optical gain of strained-layer hexagonal and cubic GaN quantum-well lasers

被引:17
作者
Ahn, D [1 ]
Park, SH [1 ]
机构
[1] CATHOLIC UNIV TAEGU HYOSUNG,DEPT PHYS,KYEONGBUK 713702,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12A期
关键词
hexagonal; cubic; GaN; optical gain; quantum-well laser; non-Markovian;
D O I
10.1143/JJAP.35.6079
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical gains of strained-layer hexagonal and cubic GaN quantum wells are. calculated within the multiband effective mass approximation. The 6 x 6 multiband effective-mass Hamiltonians are used to calculate the band structures of hexagonal and cubic quantum wells. Non-Markovian relaxation is taken into account in the optical gain calculation. Calculated results show that the optical gains of the cubic quantum well are larger in magnitudes than those of the hexagonal GaN quantum well over the wide range of carrier densities.
引用
收藏
页码:6079 / 6083
页数:5
相关论文
共 31 条
[1]   THEORY OF OPTICAL GAIN IN STRAINED-LAYER QUANTUM-WELLS WITHIN THE 6X6 LUTTINGER-KOHN MODEL [J].
AHN, D ;
YOON, SJ ;
CHUANG, SL ;
CHANG, CS .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2489-2497
[2]  
AHN D, 1995, IEEE J SEL TOP QUANT, V1, P301, DOI 10.1109/2944.401209
[3]   Optical gain of a quantum-well laser with non-markovian relaxation and many-body effects [J].
Ahn, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :960-965
[4]   OPTICAL GAIN IN A STRAINED-LAYER QUANTUM-WELL LASER [J].
AHN, D ;
CHUANG, SL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2400-2406
[5]   Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin-orbit coupling [J].
Ahn, D .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7731-7737
[6]   Band-structure engineering of a cubic GaN quantum-well laser [J].
Ahn, D .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (02) :194-196
[7]   TIME-CONVOLUTIONLESS REDUCED-DENSITY OPERATOR-THEORY OF AN ARBITRARY DRIVEN SYSTEM COUPLED TO A STOCHASTIC RESERVOIR .2. OPTICAL GAIN AND LINE-SHAPE FUNCTION OF A DRIVEN SEMICONDUCTOR [J].
AHN, D .
PHYSICAL REVIEW B, 1995, 51 (04) :2159-2166
[8]   TIME-CONVOLUTIONLESS REDUCED-DENSITY-OPERATOR THEORY OF AN ARBITRARY DRIVEN SYSTEM COUPLED TO A STOCHASTIC RESERVOIR - QUANTUM KINETIC-EQUATIONS FOR SEMICONDUCTORS [J].
AHN, D .
PHYSICAL REVIEW B, 1994, 50 (12) :8310-8318
[9]   STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER [J].
AMANO, H ;
ASAHI, T ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02) :L205-L206
[10]  
Bir G.L., 1972, Symmetry and strain induced effects in semiconductors