On the theory of optical gain of strained-layer hexagonal and cubic GaN quantum-well lasers

被引:17
作者
Ahn, D [1 ]
Park, SH [1 ]
机构
[1] CATHOLIC UNIV TAEGU HYOSUNG,DEPT PHYS,KYEONGBUK 713702,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12A期
关键词
hexagonal; cubic; GaN; optical gain; quantum-well laser; non-Markovian;
D O I
10.1143/JJAP.35.6079
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical gains of strained-layer hexagonal and cubic GaN quantum wells are. calculated within the multiband effective mass approximation. The 6 x 6 multiband effective-mass Hamiltonians are used to calculate the band structures of hexagonal and cubic quantum wells. Non-Markovian relaxation is taken into account in the optical gain calculation. Calculated results show that the optical gains of the cubic quantum well are larger in magnitudes than those of the hexagonal GaN quantum well over the wide range of carrier densities.
引用
收藏
页码:6079 / 6083
页数:5
相关论文
共 31 条
[11]   SPIN-ORBIT-COUPLING EFFECTS ON THE VALENCE-BAND STRUCTURE OF STRAINED SEMICONDUCTOR QUANTUM-WELLS [J].
CHAO, CYP ;
CHUANG, SL .
PHYSICAL REVIEW B, 1992, 46 (07) :4110-4122
[12]  
Chow WW, 1996, APPL PHYS LETT, V68, P296, DOI 10.1063/1.116064
[13]   Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions [J].
Chuang, SL ;
Chang, CS .
APPLIED PHYSICS LETTERS, 1996, 68 (12) :1657-1659
[14]   Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].
Gil, B ;
Briot, O ;
Aulombard, RL .
PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031
[15]   ULTRAVIOLET AND VIOLET LIGHT-EMITTING GAN DIODES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
GOLDENBERG, B ;
ZOOK, JD ;
ULMER, RJ .
APPLIED PHYSICS LETTERS, 1993, 62 (04) :381-383
[16]   OPTICAL GAIN CALCULATION OF WURTZITE GAN/ALGAN QUANTUM-WELL LASER [J].
KAMIYAMA, S ;
OHNAKA, K ;
SUZUKI, M ;
UENOYAMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A) :L821-L823
[17]   VERTICAL-CAVITY, ROOM-TEMPERATURE STIMULATED-EMISSION FROM PHOTOPUMPED GAN FILMS DEPOSITED OVER SAPPHIRE SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KHAN, MA ;
OLSON, DT ;
VANHOVE, JM ;
KUZNIA, JN .
APPLIED PHYSICS LETTERS, 1991, 58 (14) :1515-1517
[18]   THERMAL-STABILITY OF GAN INVESTIGATED BY LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY [J].
LIN, ME ;
SVERDLOV, BN ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1993, 63 (26) :3625-3627
[19]   MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].
LUTTINGER, JM ;
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (04) :869-883
[20]   THEORY OF OPTICAL GAIN IN IDEAL GAN HETEROSTRUCTURE LASERS [J].
MENEY, AT ;
OREILLY, EP .
APPLIED PHYSICS LETTERS, 1995, 67 (20) :3013-3015