OPTICAL GAIN CALCULATION OF WURTZITE GAN/ALGAN QUANTUM-WELL LASER

被引：49

作者：

KAMIYAMA, S ^{[1
]}

OHNAKA, K ^{[1
]}

SUZUKI, M ^{[1
]}

UENOYAMA, T ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,CENT RES LABS,KYOTO 61902,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7A期

关键词：

WURTZITE; GAN; QUANTUM WELL; SEMICONDUCTOR LASER; OPTICAL GAIN; CALCULATION;

D O I：

10.1143/JJAP.34.L821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical gain properties of wurtzite GaN/Al0.2Ga0.8N quantum well lasers are theoretically analyzed using physical parameters from ab initio calculations for the first time. The valence band of wurtzite GaN exhibits strong non-paraboticity, and the hole density of states is significantly large in comparison with the conventional zincblende crystals. This valence band feature causes high transparency cartier density of 7.5 x 10(18) cm(-3) in the 50 Angstrom thick GaN quantum well. This result predicts that the threshold current of wurtzite GaN/AlGaN quantum well laser is higher than the conventional lasers with zincblende crystals.

引用

页码：L821 / L823

页数：3

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