Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

被引：25

作者：

Chen, XY

Lu, YF

Cho, BJ

Zeng, YP

Zeng, JN

Wu, YH

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Laser Microproc Lab, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 07期

关键词：

D O I：

10.1063/1.1496141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects. (C) 2002 American Institute of Physics.

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页码：1344 / 1346

页数：3

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