Correlation between fixed positive charge and hot-electron immunity for nitridized oxides

被引:10
作者
Hook, TB
Watson, K
Lee, E
Martin, D
Ganesh, R
Kim, S
Ray, A
机构
[1] GASON INT,SAN JOSE,CA 95134
[2] IBM CORP,SEMICOND RES DEV CTR,HOPEWELL JCT,NY 12533
关键词
D O I
10.1109/55.624916
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nitrogen in the gate oxide of a 3.3-V, 0.4-mu m CMOS technology was modulated in a variety of ways, including treatments with N2O, NO, oxidation at elevated pressure, and post-oxidation annealing, A direct correlation was observed between the fixed positive charge and the hot-electron immunity, regardless of the means by which the nitrogen was incorporated, or subsequently annealed, The implication is that one benefit and one drawback of nitrided-oxide gate oxides are inextricably Linked, with significant effects on the transistor design.
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收藏
页码:471 / 473
页数:3
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