Hidden electrochemistry in the thermal grafting of silicon surfaces from Grignard reagents

被引：34

作者：

Fellah, S ^{[1
]}

Boukherroub, R ^{[1
]}

Ozanam, F ^{[1
]}

Chazalviel, JN ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France

来源：

LANGMUIR | 2004年 / 20卷 / 15期

关键词：

D O I：

10.1021/la049672j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Covalent grafting of alkyl chains on silicon can be obtained by thermal treatment in Grignard reagents. Alkyl halide present in the Grignard solution as an impurity appears to play a key role in the grafting process. Grafting efficiency is improved when the alkyl halide concentration is increased. It is also enhanced on n-type substrates as compared to p-type substrates and when alkyl bromides are present in solution rather than alkyl chlorides. The grafting reaction involves a zero-current electrochemical step. A reaction model in which simultaneous Grignard oxidation and alkyl halide reduction take place at the silicon surface accounts for all these observations. Alkyl halide reduction is the rate-determining step. Negative charging of the silicon surface lowers the energetic barrier for this reaction, allowing for efficient grafting on n-Si.

引用

页码：6359 / 6364

页数：6

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