Using a quartz crystal microbalance for low energy ion beam etching studies

被引:11
作者
Doemling, MF [1 ]
Lin, B
Rueger, NR
Oehrlein, GS
Haring, RA
Lee, YH
机构
[1] SUNY Albany, Dept Phys, Albany, NY 12222 USA
[2] IBM Corp, Div Res, Yorktown Heights, NY 10598 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 01期
关键词
D O I
10.1116/1.582139
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A quartz crystal microbalance (QCM) has been used for etching yield measurements in a low energy ion beam system. The goal is to obtain etching yields for ion energies below 150 eV for various ion chemistries and target materials. Typical beam currents are about 0.5 mu A, and the mass change per unit time on the QCM is much smaller than that for typical QCM applications, A number of problems with the application of a QCM were encountered and a description of how they were overcome is presented in this article. Quantitative etch yield results for the etching of two different photoresists and SiO2 down to 25 eV ion energy are presented. (C) 2000 American Vacuum Society. [S0734-2101(00)04101-4].
引用
收藏
页码:232 / 236
页数:5
相关论文
共 12 条
[11]   ETCHING YIELDS OF SIO2 BY LOW-ENERGY CF(X+) AND F+ IONS [J].
SHIBANO, T ;
FUJIWARA, N ;
HIRAYAMA, M ;
NAGATA, H ;
DEMIZU, K .
APPLIED PHYSICS LETTERS, 1993, 63 (17) :2336-2338
[12]  
Ziegler J. F., 1984, STOPPING RANGE IONS, V1