Growth and photoluminescence study of ZnSe quantum dots

被引：15

作者：

Chang, YH ^{[1
]}

Chieng, MH ^{[1
]}

Tsai, CC ^{[1
]}

Liao, MCH ^{[1
]}

Chen, YF ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 01期

关键词：

ZnSe; quantum dots; exciton; photoluminescence;

D O I：

10.1007/s11664-000-0116-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report detailed photoluminescence (PL) studies of ZnSe quantum dots grown by controlling the flow duration of the precursors in a metal-organic chemical vapor deposition system. The growth time of the quantum dots determines the amount of blue shift observed in the PL measurements. Blue shift as large as 320 meV was observed, and the emission was found to persist up to room temperature. It is found that changing the flow rate and the total number of quantum dot layers also affect the peak PL energy. The temperature dependence of the peak PL energy follows the Varshni relation. From analyzing the temperature-dependent integrated intensity of the photoluminescence spectra, it is found that the activation energy for the quenching of photoluminescence increases with decreasing quantum dot size, and is identified as the binding energy of the exciton in ZnSe quantum dot.

引用

页码：173 / 176

页数：4

共 15 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].