Organic film thickness influence on the bias stress instability in sexithiophene field effect transistors

被引：33

作者：

Di Girolamo, F. V. ^{[1
,2
]}

Aruta, C. ^{[1
,2
]}

Barra, M. ^{[1
,2
]}

D'Angelo, P. ^{[1
,2
,3
]}

Cassinese, A. ^{[1
,2
]}

机构：

[1] Univ Naples Federico II, CNR INFM Coherentia, I-80125 Naples, Italy

[2] Univ Naples Federico II, Dept Phys Sci, I-80125 Naples, Italy

[3] CNR ISMN, I-40129 Bologna, Italy

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 96卷 / 02期

关键词：

AMORPHOUS-SILICON; STABILITY; RELAXATION; HYDROGEN; SHIFTS;

D O I：

10.1007/s00339-009-5250-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 to 130 nm on Si/SiO2 substrates. After the T6 film structural analysis by X-ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties of the organic layer has been highlighted. Conversely, the mobility values as a result are found to be almost thickness independent.

引用

页码：481 / 487

页数：7

共 30 条

[1] Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates [J].