Magnetic and structural characterization of Mn-implanted, single-crystal ZnGeSiN2

被引：41

作者：

Pearton, SJ ^{[1
]}

Overberg, ME

Abernathy, CR

Theodoropoulou, NA

Hebard, AF

Chu, SNG

Osinsky, A

Fuflyigin, V

Zhu, LD

Polyakov, AY

Wilson, RG

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[3] Agere Syst, Murray Hill, NJ 07974 USA

[4] Corning Appl Technol, Woburn, MA 01801 USA

[5] Inst Rare Met, Moscow, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.1490621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of ZnSiN2, ZnGe0.65Si0.35N2, and ZnGe0.31Si0.69N2 grown on Al2O3 substrates were implanted at 350 degreesC with high doses (5x10(16) cm(-2)) of Mn+ ions and annealed at 700 degreesC. The implanted region did not appear to become amorphous and showed strong selected area diffraction patterns. Hysteresis was observed in magnetization versus field curves from all of the implanted samples. Differences in field-cooled and zero field-cooled magnetization persisted to temperatures of similar to200 K for ZnSiN2, and similar to280 K for both ZnGe0.31Si0.69N2 and ZnGe0.69Si0.31N2. The results are consistent with recent magnetic data from (ZnxMn1-x)GeP2, ZnSnAs2 and (CdxMn1-x)GeP2 and suggest that this class of materials may be promising for dilute magnetic semiconductor applications. (C) 2002 American Institute of Physics.

引用

页码：2047 / 2051

页数：5

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