Kinetics of processes in the Ti-Si1-xGex systems

The kinetics of processes related to the formation of C49 and C54 Ti(Si1-yGey)(2) germanosilicide phases in the two relaxed and strained Ti/Si1-xGex systems (x(1)=0.35 and x(2)=0.20) in the temperature range 600-800 degrees C are considered. These processes have been studied through Auger electron spectroscopy, secondary ion mass spectroscopy, x-ray diffraction, and Raman scattering spectroscopy supported by ion beam etching techniques. Si/Ge ''intergrain'' alloy has been found between the grains of the C49 or/and C54 phases, with a Ge-rich part Si1-zGez of z=2x-3x in the upper region. At higher temperatures, the Ge concentration in the Ge-rich alloy decreases and its volume increases. The temperature required for obtaining similar changes are higher when x(2) <x(1). A kinetic electron-related model is proposed to explain the observed phenomena. (C) 1996 American Institute of Physics.