Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation

被引：180

作者：

Mookerjea, Saurabh ^{[1
]}

Krishnan, Ramakrishnan ^{[1
]}

Datta, Suman ^{[1
]}

Narayanan, Vijaykrishnan ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 09期

关键词：

Indium arsenide (InAs); Miller capacitance; MOSFETs; switching current trajectory; tunnel field-effect transistors (TFETs); TRANSISTOR;

D O I：

10.1109/TED.2009.2026516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (C-EFF) and drive current (I-EFF) for delay (tau(f) = 0.69 RswCEFF, where R-sw = V-DD/2 I-EFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where C-EFF is approximately equal to the gate capacitance (C-gg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.

引用

页码：2092 / 2098

页数：7

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