Efficiency evaluation of postetch metal stack anticorrosion treatments using chemical analyses by x-ray photoelectron spectroscopy and wide dispersive x-ray fluorescence

被引:9
作者
Czuprynski, P [1 ]
Joubert, O [1 ]
Heitzmann, M [1 ]
Louis, D [1 ]
Vizioz, C [1 ]
Lajoinie, E [1 ]
机构
[1] CEA GRENOBLE,GRESSI,LETI,F-38054 GRENOBLE 09,FRANCE
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 04期
关键词
D O I
10.1116/1.589383
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Chemical analyses by x-ray photoelectron spectroscopy (XPS) combined with wide dispersive x-ray fluorescence (WDXRF) have been used to evaluate the efficiency of metal stack anticorrosion treatments previously etched in a low-pressure high-density plasma source. Analyses demonstrate that residual chlorine is still present in the metal stack showing that corrosion could occur in the subsequent technological steps of the process. In particular, XPS analyses have shown that, after anticorrosion treatment, residual chlorine species are located on the aluminum sidewalls of the features. Combining the results obtained by WDXRF and XPS has allowed a better understanding of the action of anticorrosion treatments. (C) 1997 American Vacuum Society.
引用
收藏
页码:1000 / 1007
页数:8
相关论文
共 16 条
[1]   Polysilicon gate etching in high density plasmas .2. X-ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine-based chemistry [J].
Bell, FH ;
Joubert, O ;
Vallier, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :1796-1806
[2]  
BRADLEY S, 1991, P 8 INT IEEE VLSI MU, P298
[3]  
Cameron G., 1989, Semiconductor International, V12, P142
[4]  
CLAYTON FR, 1993, SOLID STATE TECHNOL, V36, P93
[5]  
CZUPRYNSKI P, UNPUB J VAC SCI TE B
[6]  
Gabriel C., 1992, Proceedings of the Symposia on Reliability of Semiconductor Devices/Interconnections and Dielectric Breakdown for Microelectronic Applications, P152
[7]   CHEMICAL TOPOGRAPHY OF ANISOTROPIC ETCHING OF POLYCRYSTALLINE SI MASKED WITH PHOTORESIST [J].
GUINN, KV ;
DONNELLY, VM .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) :2227-2234
[8]   MECHANISM FOR ALSICU ALLOY CORROSION [J].
ISHIDA, T ;
FUJIWARA, N ;
YONEDA, M ;
NAKAMOTO, K ;
HORIE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6B) :2045-2048
[9]   Metal stack etching using a helical resonator plasma [J].
Labelle, CB ;
Maynard, HL ;
Lee, JTC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04) :2574-2581
[10]  
MADOKORO S, 1984, 16 C SOL STAT DEV MA, P51