Effects of addition of SiF4 during growth of nanocrystalline silicon films deposited at 100°C by plasma-enhanced chemical vapor deposition

被引：16

作者：

Ali, AM ^{[1
]}

Inokuma, T ^{[1
]}

Kurata, Y ^{[1
]}

Hasegawa, S ^{[1
]}

机构：

[1] Kanazawa Univ, Fac Technol, Dept Elect, Kanazawa, Ishikawa 9208667, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 10期

关键词：

crystalline silicon; plasma CVD; low temperature deposition; addition of SiF4; small grain size; high crystallinity;

D O I：

10.1143/JJAP.38.6047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural properties of nanocrystalline silicon (nc-Si) films, deposited at 100 degrees C using SiF4/SiH4/H-2 by plasma-enhanced chemical vapor deposition, were investigated by changing the SiF4 flow rate, [SiF4]. Ar a certain law [SiF4] value (=[SiF4](s)), both the crystallinity and the gl ain size had minimum values. The Raman peak shifts corresponded well with a change in stress, and films with [SiF4](s) were suggested to be free from random stress in the local Si-Si networks. The photoluminescence spectra had the highest intensity and the highest peak energy at [SiF4](s). It was proposed that nc-Si films with high [SiF4] have microvoid-like grain boundaries with high densities of Si-F and SiH2 bonds, exhibiting an increase in crystallinity and susceptibility to O contamination after deposition. These results were interpreted in terms of the change in the etch rates by H and F radicals, depending on deposition temperature.

引用

页码：6047 / 6053

页数：7

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