Analysis of the depth homogeneity of p-PS by reflectance measurements

被引:46
作者
Thonissen, M
Berger, MG
Billat, S
ArensFischer, R
Kruger, M
Luth, H
Theiss, W
Hillbrich, S
Grosse, P
Lerondel, G
Frotscher, U
机构
[1] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-52056 AACHEN,GERMANY
[2] UNIV GRENOBLE 1,F-38402 GRENOBLE,FRANCE
[3] TU BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY
关键词
silicon; optical spectroscopy; reflection spectroscopy;
D O I
10.1016/S0040-6090(96)09420-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated changes in the etch rate of p-PS with increasing etching time as well as changes of the porosity of buried layers with depth. These effects can be attributed to the influence of chemical etching and variations in the electrolyte composition with depth. To study these changes, first the porosities of layers above and below layers with different thicknesses were determined by a fit of the reflectance spectra of these layer systems using the effective medium theory. Secondly we have measured oscillations in the reflectance during the formation of PS layers caused by the increasing layer thickness. Using these experimental results we are able to give a functional description of the changes in the optical thickness with depth. In addition, the influence of the chemical etching and changes of the HF concentration on the optical thickness can be estimated, As a result a method for changing the current with depth can be given, which can be used to minimize porosity gradients. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:92 / 96
页数:5
相关论文
共 17 条
[1]  
[Anonymous], POROUS SILICON SCI T
[2]  
[Anonymous], ADV SOLID STATE PHYS
[3]   POROSITY SUPERLATTICES - A NEW CLASS OF SI HETEROSTRUCTURES [J].
BERGER, MG ;
DIEKER, C ;
THONISSEN, M ;
VESCAN, L ;
LUTH, H ;
MUNDER, H ;
THEISS, W ;
WERNKE, M ;
GROSSE, P .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (06) :1333-1336
[4]  
BERGER MG, THIN SOLID FILMS, V297
[5]  
BERGER MG, 1996, THESIS RWTH AACHEN
[6]  
BILLAT S, IN PRESS THIN SOLID, V297
[7]   RUGATE FILTER THEORY - AN OVERVIEW [J].
BOVARD, BG .
APPLIED OPTICS, 1993, 32 (28) :5427-5442
[8]   DETERMINATION OF THE SPECIFIC SURFACE-AREA OF POROUS SILICON FROM ITS ETCH RATE IN HF SOLUTIONS [J].
HALIMAOUI, A .
SURFACE SCIENCE, 1994, 306 (1-2) :L550-L554
[9]   POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS [J].
HERINO, R ;
BOMCHIL, G ;
BARLA, K ;
BERTRAND, C ;
GINOUX, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :1994-2000
[10]  
HU SW, 1967, J ELECTROCHEM SOC, V14, P414