POROSITY SUPERLATTICES - A NEW CLASS OF SI HETEROSTRUCTURES

被引：156

作者：

BERGER, MG ^{[1
]}

DIEKER, C ^{[1
]}

THONISSEN, M ^{[1
]}

VESCAN, L ^{[1
]}

LUTH, H ^{[1
]}

MUNDER, H ^{[1
]}

THEISS, W ^{[1
]}

WERNKE, M ^{[1
]}

GROSSE, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-52056 AACHEN,GERMANY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1994年 / 27卷 / 06期

关键词：

D O I：

10.1088/0022-3727/27/6/035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porosity superlattices have been investigated by transmission electron microscopy, photoluminescence and reflectance spectroscopy. The superlattices were formed on p-type doped Si using two different techniques. Firstly, for homogeneously doped substrates we have periodically varied the formation current density and thereby the porosity. Secondly, the current density was kept constant while etching was performed on periodically doped Si layers. For the first type of superlattices the layer thicknesses were determined by transmission electron microscopy. The results are in good agreement with the values calculated from the etching rate and time. For both types of superlattices, reflectance and photoluminescence spectra show strong modulation due to the periodicity of the superlattice.

引用

页码：1333 / 1336

页数：4

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