DCS 1800 base station receiver integrated in 0.25μm CMOS

被引:5
作者
Boric-Lubecke, O [1 ]
Lin, JS [1 ]
Gould, P [1 ]
机构
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词
D O I
10.1109/MWSYM.2002.1011817
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the first CMOS chip implementation of a GSM base station receiver. This chip consists of two LNA's, switch, mixer, LO buffer amplifier/balun, and RF balun. A CMOS IF amplifier is packaged separately. The 0.25 mum CMOS receiver, biased at 3 V, meets DCS1800 specifications and achieves better linearity and noise figure than previously published BiCMOS receivers. Output IP3 (OIP3) of over 25 dBm was obtained for the complete receiver chain, with a noise figure of 3 dB, and gain of 25 dB. This is believed to be the highest OIP3 and lowest NF reported to date for a CMOS receiver that meets GSM base station specifications.
引用
收藏
页码:1049 / 1052
页数:4
相关论文
共 18 条
[1]  
BORICLUBECKE O, 2000, IEEE AS MICR C 2000, P181
[2]  
CAMERON T, 1999, IEEE WIR COMM NETW, V2, P732
[3]   GaAs MMICs for cellular and wireless networks base stations [J].
Delhaye, E .
JOURNAL DE PHYSIQUE IV, 1999, 9 (P2) :99-103
[4]   CMOS resistive ring mixer MMICs for GSM 900 and DCS 1800 base station applications [J].
Gould, Penny ;
Zelley, Christopher ;
Lin, Jenshan .
IEEE MTT-S International Microwave Symposium Digest, 2000, 1 :521-524
[5]  
GOULD P, 2001, GAAS 2001 S LOND UK, P661
[6]   A sub-1-dB NF ±2.3-kV ESD-protected 900-MHz CMOS LNA [J].
Gramegna, G ;
Paparo, M ;
Erratico, PG ;
De Vita, P .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (07) :1010-1017
[7]  
*GSM 05 05, 1998, DIG CELL TEL SYST RA
[8]  
*GSM 11 21, 1997, DIG CELL TEL SYST BA
[9]   Integrated circuit technology options for RFIC's - Present status and future directions [J].
Larson, LE .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (03) :387-399
[10]  
LARSON LE, 1997, RF MICROWAVE CIRCUIT, P365