Integrated circuit technology options for RFIC's - Present status and future directions

被引:144
作者
Larson, LE [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
关键词
CMOS RF; low-noise amplifiers; monolithic radio architectures; radio receivers; wireless communications;
D O I
10.1109/4.661204
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.
引用
收藏
页码:387 / 399
页数:13
相关论文
共 86 条
[1]  
ABIDI A, 1996 IEEE BCTM MINN, P35
[2]   Direct-conversion radio transceivers for digital communications [J].
Abidi, AA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (12) :1399-1410
[3]  
ADLER R, 1946, P IRE JUN
[4]  
[Anonymous], ADV DIGITAL COMMUNIC
[5]  
[Anonymous], 1990, RADIO COMMUNICATIONS
[6]   Direct conversion - How to make it work in TV tuners [J].
Aschwanden, F .
IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 1996, 42 (03) :729-738
[7]   High Q inductors for wireless applications in a complementary silicon bipolar process [J].
Ashby, KB ;
Koullias, IA ;
Finley, WC ;
Bastek, JJ ;
Moinian, S .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (01) :4-9
[8]  
BJEREDE B, 1994, 1994 IEEE 44 VEH TEC, V1, P467
[9]  
BONFORD M, 1990, MICROWAVE J NOV
[10]  
BROWN T, 1996 IEEE BCTM MINN, P165