Integrated circuit technology options for RFIC's - Present status and future directions

被引：144

作者：

Larson, LE ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1998年 / 33卷 / 03期

关键词：

CMOS RF; low-noise amplifiers; monolithic radio architectures; radio receivers; wireless communications;

D O I：

10.1109/4.661204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.

引用

页码：387 / 399

页数：13