Magnetic and transport properties, and electronic structure of the layered chalcogenide AgCrSe2

被引:21
作者
Gautam, UK
Seshadri, R [1 ]
Vasudevan, S
Maignan, A
机构
[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Dept Inorgan & Phys Chem, Bangalore 560012, Karnataka, India
[3] Inst Sci Mat & Rayonnement, CNRS, UMR 6508, Lab CRISMAT, F-14050 Caen, France
关键词
AgCrSe2; antiferromagnetics; magnetic semiconductors; low-dimensional electronic structure;
D O I
10.1016/S0038-1098(02)00226-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report a detailed study of the magnetic and transport properties of polycrystalline A-CrSe2, a layered magnetic chalcogenide that orders antiferromagnetically without frustration at 55 K. The magnetic ordering corresponds to ill-plane ferromagnetic interactions with anti ferromagnetic coupling between the planes. Transport studies suggest a semiconductor that is at the I-M transition boundary in terms of its resistivity, with variable-range hopping behavior at intermediate temperatures and Efros-Shklovskii hopping at low temperatures. At high temperatures (>340 K) the temperature coefficient of resistance turns positive as a result, we believe, of disorder in the silver sub-lattice. First principles density functional calculations of the electronic structure suggest a magnetic insulator ground state, and means to tune the system to ferromagnetic half-metal. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:607 / 612
页数:6
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