Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope

被引：6

作者：

Bangert, U

Harvey, AJ

Dieker, C

Hartmann, A

Keyse, R

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

[2] UNIV LIVERPOOL, DEPT MAT SCI & ENGN, LIVERPOOL L69 3BX, MERSEYSIDE, ENGLAND

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1996年 / 74卷 / 06期

关键词：

D O I：

10.1080/01418619608240733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray analysis in a high-resolution scanning transmission electron microscope is carried out on III-V compound and SixGe1-x quantum wells and quantum wires. Simulated X-ray profiles were obtained by convolving the electron beam profile with a composition function. From best fits with experimental data, quantitated composition profiles can be obtained with nanometre resolution. Compositions in wells and wires are inhomogeneous. Ahoy clusters tend to form in III-V compound quaternary quantum well stacks. SixGe1-x quantum wells on patterned substrates show strong compositional asymmetries along the growth direction and so do quantum wires in both materials systems. In the case of the SixGe1-x system, aspects of the growth dynamics which lead to the observed compositional behaviour are deduced.

引用

页码：1421 / 1437

页数：17

共 17 条

[1] FABRICATION OF INGAAS STRAINED QUANTUM-WIRE STRUCTURES USING SELECTIVE-AREA METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH [J].