Exciton capture by shallow quantum wells in separate confinement heterostructures

被引：13

作者：

Heller, O

Bastard, G

机构：

[1] Laboratoire de Physique de la Matière Condensée, Ecole Normale Supérieure, 75005 Paris

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.54.5629

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate theoretically the exciton capture into shallow quantum wells in separate confinement heterostructures. The transition to the quantum well 1s, 2s, and continuum states by the emission of an LO phonon is analyzed for the material system AlxGa1-xAs/GaAs. The capture times are analytically calculated in a limiting case and numerically evaluated in the general case. The comparison of the two approaches highlights the physics of the exciton capture process.

引用

页码：5629 / 5636

页数：8

共 21 条

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