ULTRAFAST OPTICAL EVIDENCE FOR RESONANT ELECTRON-CAPTURE IN QUANTUM-WELLS

被引：52

作者：

BARROS, MRX

BECKER, PC

MORRIS, D

DEVEAUD, B

REGRENY, A

BEISSER, F

机构：

[1] FRANCE TELECOM,CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.47.10951

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dynamics of carrier capture in GaAs quantum wells have been measured with femtosecond resolution using pump and probe experiments under resonant excitation conditions. The electron capture mechanism at room temperature shows a resonance with a time as short as 650 fs for a well thickness of 58 angstrom. This gives strong evidence for the importance of the quantum-mechanical LO-phonon-assisted capture mechanism predicted by theoretical calculations.

引用

页码：10951 / 10954

页数：4

共 13 条

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