Microstructure and dielectric properties of epitaxial Bi2WO6 deposited by pulsed laser ablation

被引：37

作者：

Hamada, M ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

THIN SOLID FILMS | 1997年 / 306卷 / 01期

关键词：

dielectric properties; epitaxy; laser ablation;

D O I：

10.1016/S0040-6090(97)00244-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dielectric films of Bi2WO6 (BWO) more 12.5-nm thick are formed epitaxially on Nb-doped SrTiO3 substrate by pulsed laser deposition (PLD). BWO film shows an atomically smooth surface with a flat terraces of 200-300 nm wide, and steps of 0.8 nm or 1.6 nm, corresponding to one or one-half unit cell. At film thickness of less than 70 nm, the dielectric constants of BWO film are held to a value of 20. A BWO film, with its atomically-flat surface and its dielectric constant (epsilon(r)) unchanging with film thickness, is an ideal material for device applications in the semiconducting field. (C) 1997 Elsevier Science S.A.

引用

页码：6 / 9

页数：4

共 22 条

[1] MEASUREMENT AND THERMODYNAMIC ANALYSES OF THE DIELECTRIC-CONSTANT OF EPITAXIALLY GROWN SRTIO3 FILMS [J].