Weak-localization-like temperature-dependent conductivity of a dilute two-dimensional hole gas in a parallel magnetic field

被引:30
作者
Gao, XPA [1 ]
Mills, AP
Ramirez, AP
Pfeiffer, LN
West, KW
机构
[1] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
[2] Univ Calif Riverside, Dept Phys, Riverside, CA 92521 USA
[3] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[4] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1103/PhysRevLett.89.016801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.7-1.6)x10(10) cm (-2) on the metallic side of the zero-field "metal-insulator transition." In a parallel field well above B-c that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Deltag(T)approximate to(1/pi) (e(2)/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.
引用
收藏
页码:168011 / 168014
页数:4
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