Two-dimensional metal in a parallel magnetic field

被引：29

作者：

Gao, XPA

Mills, AP

Ramirez, AP

Pfeiffer, LN

West, KW

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[3] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.88.166803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the effect of an in-plane parallel magnetic field (B-parallel to) on two high mobility metalliclike dilute two-dimensional hole gas systems in GaAs quantum wells. The experiments reveal that, while suppressing the magnitude of the low temperature resistance drop, B-parallel to does not affect E-a, the characteristic energy scale of the metallic resistance drop. The field B-c at which the metalliclike resistance drop vanishes is dependent on both the width of the quantum well and the orientation of B-parallel to. It is unexpected that E-a is unaffected by B-parallel to up to B-c despite the fact that the Zeeman energy at B-c is roughly equal to E-a.

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页码：4 / 166803

页数：4

相关论文

共 21 条

[1] Colloquium:: Metallic behavior and related phenomena in two dimensions [J].

Abrahams, E ;

Kravchenko, SV ;

Sarachik, MP .

REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :251-266

[2] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LICCIARDELLO, DC ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676

[3] Theory of metal-insulator transitions in gated semiconductors [J].

Altshuler, BL ;

Maslov, DL .

PHYSICAL REVIEW LETTERS, 1999, 82 (01) :145-148

[4] Metallic phase and metal-insulator transition in two-dimensional electronic systems [J].

Castellani, C ;

Di Castro, C ;

Lee, PA .

PHYSICAL REVIEW B, 1998, 57 (16) :R9381-R9384

[5] Parallel magnetic field induced giant magnetoresistance in low density quasi-two-dimensional layers [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW LETTERS, 2000, 84 (24) :5596-5599

[6] The metalliclike conductivity of a two-dimensional hole system [J].

Hanein, Y ;

Meirav, U ;

Shahar, D ;

Li, CC ;

Tsui, DC ;

Shtrikman, H .

PHYSICAL REVIEW LETTERS, 1998, 80 (06) :1288-1291

[7] New liquid phase and metal-insulator transition in Si MOSFETs [J].

He, S ;

Xie, XC .

PHYSICAL REVIEW LETTERS, 1998, 80 (15) :3324-3327

[8] THEORETICAL LIMIT OF MOBILITY OF 2-DIMENSIONAL ELECTRONS IN GAAS [J].

KARPUS, V .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (07) :691-694

[9] POSSIBLE METAL-INSULATOR-TRANSITION AT B=0 IN 2 DIMENSIONS [J].

KRAVCHENKO, SV ;

KRAVCHENKO, GV ;

FURNEAUX, JE ;

PUDALOV, VM ;

DIORIO, M .

PHYSICAL REVIEW B, 1994, 50 (11) :8039-8042

[10] Two-species percolation and scaling theory of the metal-insulator transition in two dimensions [J].

Meir, Y .

PHYSICAL REVIEW B, 2000, 61 (24) :16470-16476