Parallel magnetic field induced giant magnetoresistance in low density quasi-two-dimensional layers

被引：102

作者：

Das Sarma, S ^{[1
]}

Hwang, EH ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.84.5596

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density quasi-two-dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the orbital motion arising from the finite layer thickness and the large Fermi wavelength of the quasi-two-dimensional system at low carrier densities.

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页码：5596 / 5599

页数：4

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