Spin degree of freedom in a two-dimensional electron liquid

被引：251

作者：

Okamoto, T ^{[1
]}

Hosoya, K

Kawaji, S

Yagi, A

机构：

[1] Gakushuin Univ, Dept Phys, Toshima Ku, Tokyo 1718588, Japan

[2] NPC Ltd, Shiobara, Tochigi 3292811, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.82.3875

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By rotating the sample at various total strength of the magnetic field, we found that the normal component of the magnetic field at minima in the diagonal resistivity increases linearly with the concentration of "spin-up" electrons.

引用

页码：3875 / 3878

页数：4

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